Fudan Energy Storage Device
PoX: Super-Fast Graphene-Based Flash Memory
Recently a team at Fudan University claimed to have developed a picosecond-level Flash memory device (called ''PoX'') that has an access time of a mere 400 picoseconds.
Contact online >>
Fudan Energy Storage Device
An integrated device for both photoelectric conversion and energy storage based on free-standing and aligned carbon nanotube film" J. Mater. Chem. A., 2013, 1, 954-958.
Contact online >>
Ultra-High-Speed Flash Memory Created by Chinese Researchers
Researchers at Fudan University have made a significant advancement in integrated circuit technology. The team led by Zhou Peng and Liu Chunsen has developed "PoX," a picosecond
Contact online >>
New graphene-based flash memory writes data in 400
Researchers at Fudan University in Shanghai have unveiled a flash memory device that breaks speed records once thought unreachable. Dubbed "PoX," the device can program data in just
Contact online >>
Fudan''s PoX Device: A Quantum Leap in Memory Speed
With its unprecedented picosecond-level flash memory innovation, the PoX device is poised to redefine our approach to analytics, hastening the end of speed limits that once constrained
Contact online >>
Fudan University researchers create record-breaking flash memory
Described by Zhou Peng, a leading researcher from the university''s State Key Laboratory of Integrated Chips and Systems, as operating “1 billion times in the blink of an eye,” this device
Contact online >>
World''s fastest Flash memory developed: writes in just 400 picoseconds
Setting a new benchmark for Flash memory performance, a team of researchers at Fudan University in Shanghai has developed a super-fast, picosecond-level non-volatile memory device.
Contact online >>
Researchers develop flash memory device
Researchers from Shanghai-based Fudan University have developed a picosecond-level flash memory device with an unprecedented program speed of 400 picoseconds, equivalent to
Contact online >>
China scientists develop flash memory 10,000× faster than current tech
A research team at Fudan University has built the fastest semiconductor storage device ever reported, a non‑volatile flash memory dubbed “PoX” that programs a single bit in 400
Contact online >>
Fudan University: The new flexible fiber energy storage device is put
Peng Huisheng''s team at Fudan University first proposed it in 2013 and realized the first fiber lithium-ion battery in the world . The battery is a flexible one-dimensional fiber that can be woven into various
Contact online >>